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Toshiba Semiconductor & Storage RN1109MFV(TPL3)

RN1109MFV(TPL3) picture photo
Mfg. Part Number
RN1109MFV(TPL3)
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 150MW VESM
Datasheet Download
RN1109MFV(TPL3).pdf
Availability of RN1109MFV(TPL3)

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.04200
Our Price
Quote by Email

QUANTITY

 

EIS Components is the stocking Distributor of RN1109MFV(TPL3), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1109MFV(TPL3) can be shipped within 24 hours after order. If you have any demands for RN1109MFV(TPL3), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1109MFV(TPL3) Order Process
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Specifications of RN1109MFV(TPL3)
Internal Part NumberEIS-RN1109MFV(TPL3)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package8,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k
Resistor - Emitter Base (R2) (Ohms)22k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1109MFV(TPL3)
Related LinksRN1109M, RN1109MFV(TPL3) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1109MFV(TPL3) Details Description
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