Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-RN1901FETE85LF | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Standard Package | 1 | |
Category | Discrete Semiconductor Products | |
Family | Transistors (BJT) - Arrays, Pre-Biased | |
Series | - | |
Packaging | Cut Tape (CT) | |
Transistor Type | 2 NPN - Pre-Biased (Dual) | |
Current - Collector (Ic) (Max) | 100mA | |
Voltage - Collector Emitter Breakdown (Max) | 50V | |
Resistor - Base (R1) (Ohms) | 4.7k | |
Resistor - Emitter Base (R2) (Ohms) | 4.7k | |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 5V | |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA | |
Current - Collector Cutoff (Max) | 100nA (ICBO) | |
Frequency - Transition | 250MHz | |
Power - Max | 100mW | |
Mounting Type | Surface Mount | |
Package / Case | SOT-563, SOT-666 | |
Supplier Device Package | ES6 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | RN1901FETE85LF | |
Related Links | RN1901F, RN1901FETE85LF Datasheet, Toshiba Semiconductor & Storage Distributor |
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