Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-SCT2160KEC | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Mfg Application Notes | SiC Power Devices and Modules | |
Video File | ROHM Semiconductor SiC MOSFET Technology | |
Featured Product | 2nd Generation High-Voltage SiC MOSFETs 1200 V Silicon Carbide (SiC) Diodes | |
Standard Package | 360 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Tube | |
FET Type | SiCFET N-Channel, Silicon Carbide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | |
Rds On (Max) @ Id, Vgs | 208 mOhm @ 7A, 18V | |
Vgs(th) (Max) @ Id | 4V @ 2.5mA | |
Gate Charge (Qg) @ Vgs | 62nC @ 18V | |
Input Capacitance (Ciss) @ Vds | 1200pF @ 800V | |
Power - Max | 165W | |
Mounting Type | Through Hole | |
Package / Case | TO-247-3 | |
Supplier Device Package | TO-247 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | SCT2160KEC | |
Related Links | SCT21, SCT2160KEC Datasheet, Rohm Semiconductor Distributor |
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