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Vishay/Siliconix SI3812DV-T1-GE3

SI3812DV-T1-GE3 picture photo
Mfg. Part Number
SI3812DV-T1-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 20V 2A 6-TSOP
Datasheet Download
SI3812DV-T1-GE3.pdf
Availability of SI3812DV-T1-GE3

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of SI3812DV-T1-GE3, we specialize in Vishay/Siliconix all series electronic components. SI3812DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3812DV-T1-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI3812DV-T1-GE3 Order Process
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Specifications of SI3812DV-T1-GE3
Internal Part NumberEIS-SI3812DV-T1-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLPCN- SIL-0582013 05/Dec/2013
Standard Package3,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesLITTLE FOOT®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureDiode (Isolated)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs125 mOhm @ 2.4A, 4.5V
Vgs(th) (Max) @ Id600mV @ 250µA (Min)
Gate Charge (Qg) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max830mW
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI3812DV-T1-GE3
Related LinksSI3812D, SI3812DV-T1-GE3 Datasheet, Vishay/Siliconix Distributor
SI3812DV-T1-GE3 Details Description
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