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Vishay/Siliconix SI5402BDC-T1-GE3

SI5402BDC-T1-GE3 picture photo
Mfg. Part Number
SI5402BDC-T1-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 30V 4.9A 1206-8
Datasheet Download
SI5402BDC-T1-GE3.pdf
Availability of SI5402BDC-T1-GE3

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of SI5402BDC-T1-GE3, we specialize in Vishay/Siliconix all series electronic components. SI5402BDC-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI5402BDC-T1-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI5402BDC-T1-GE3 Order Process
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Specifications of SI5402BDC-T1-GE3
Internal Part NumberEIS-SI5402BDC-T1-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLPCN- SIL-0582013 05/Dec/2013
Standard Package3,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesTrenchFET®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C4.9A (Ta)
Rds On (Max) @ Id, Vgs35 mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) @ Vgs20nC @ 10V
Input Capacitance (Ciss) @ Vds-
Power - Max1.3W
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device Package1206-8 ChipFET™
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI5402BDC-T1-GE3
Related LinksSI5402BD, SI5402BDC-T1-GE3 Datasheet, Vishay/Siliconix Distributor
SI5402BDC-T1-GE3 Details Description
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