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Vishay/Siliconix SIHB22N60E-GE3

SIHB22N60E-GE3 picture photo
Mfg. Part Number
SIHB22N60E-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 600V 21A D2PAK
Datasheet Download
SIHB22N60E-GE3.pdf
Availability of SIHB22N60E-GE3

Available Quantity

6831 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.89440
Our Price
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EIS Components is the stocking Distributor of SIHB22N60E-GE3, we specialize in Vishay/Siliconix all series electronic components. SIHB22N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHB22N60E-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SIHB22N60E-GE3 Order Process
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Specifications of SIHB22N60E-GE3
Internal Part NumberEIS-SIHB22N60E-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage MOSFET E Series and PFC Device Selection
PCN Assembly/OriginSIL-079-2014-Rev-0 26/Sep/2014
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Rds On (Max) @ Id, Vgs180 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs86nC @ 10V
Input Capacitance (Ciss) @ Vds1920pF @ 100V
Power - Max227W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD²PAK
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SIHB22N60E-GE3
Related LinksSIHB22N, SIHB22N60E-GE3 Datasheet, Vishay/Siliconix Distributor
SIHB22N60E-GE3 Details Description
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