Toshiba Semiconductor & Storage TC58BYG2S0HBAI6

TC58BYG2S0HBAI6 picture photo
Mfg. Part Number
TC58BYG2S0HBAI6
Manufacturer
Product Category
Memory
Brief Description
EEPROM SLC 4GB NAND 24NM 67VFBGA
Datasheet Download
TC58BYG2S0HBAI6.pdf
Availability of TC58BYG2S0HBAI6

Available Quantity

5450 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 3.00150
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of TC58BYG2S0HBAI6, we specialize in Toshiba Semiconductor & Storage all series electronic components. TC58BYG2S0HBAI6 can be shipped within 24 hours after order. If you have any demands for TC58BYG2S0HBAI6, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
TC58BYG2S0HBAI6 Order Process
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Specifications of TC58BYG2S0HBAI6
Internal Part NumberEIS-TC58BYG2S0HBAI6
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package96
Category Integrated Circuits (ICs)
FamilyMemory
SeriesBenand™
PackagingTray
Format - MemoryEEPROMs - Serial
Memory TypeEEPROM - NAND
Memory Size4G (512M x 8)
Speed25ns
InterfaceParallel
Voltage - Supply1.7 V ~ 1.95 V
Operating Temperature-40°C ~ 85°C
Package / Case67-VFBGA
Supplier Device Package67-VFBGA (6.5x8)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)TC58BYG2S0HBAI6
Related LinksTC58BYG, TC58BYG2S0HBAI6 Datasheet, Toshiba Semiconductor & Storage Distributor
TC58BYG2S0HBAI6 Details Description
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