Toshiba Semiconductor & Storage TH58BYG2S3HBAI6

TH58BYG2S3HBAI6 picture photo
Mfg. Part Number
TH58BYG2S3HBAI6
Manufacturer
Product Category
Memory
Brief Description
EEPROM SLC 4GB NAND 24NM 67FBGA
Datasheet Download
TH58BYG2S3HBAI6.pdf
Availability of TH58BYG2S3HBAI6

Available Quantity

5116 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 3.16710
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of TH58BYG2S3HBAI6, we specialize in Toshiba Semiconductor & Storage all series electronic components. TH58BYG2S3HBAI6 can be shipped within 24 hours after order. If you have any demands for TH58BYG2S3HBAI6, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
TH58BYG2S3HBAI6 Order Process
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Specifications of TH58BYG2S3HBAI6
Internal Part NumberEIS-TH58BYG2S3HBAI6
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)3 (168 Hours)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package96
Category Integrated Circuits (ICs)
FamilyMemory
SeriesBenand™
PackagingTray
Format - MemoryEEPROMs - Serial
Memory TypeEEPROM - NAND
Memory Size4G (512M x 8)
Speed25ns
InterfaceParallel
Voltage - Supply1.7 V ~ 1.95 V
Operating Temperature-40°C ~ 85°C
Package / Case67-VFBGA
Supplier Device Package67-VFBGA (6.5x8)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)TH58BYG2S3HBAI6
Related LinksTH58BYG, TH58BYG2S3HBAI6 Datasheet, Toshiba Semiconductor & Storage Distributor
TH58BYG2S3HBAI6 Details Description
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