Toshiba Semiconductor & Storage TH58BYG2S3HBAI6
- Mfg. Part Number
- TH58BYG2S3HBAI6
- Manufacturer
- Toshiba Semiconductor & Storage
- Product Category
- Memory
- Brief Description
- EEPROM SLC 4GB NAND 24NM 67FBGA
- Datasheet Download
- TH58BYG2S3HBAI6.pdf
Availability of TH58BYG2S3HBAI6
Available Quantity
5116 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 3.16710
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of TH58BYG2S3HBAI6, we specialize in Toshiba Semiconductor & Storage all series electronic components. TH58BYG2S3HBAI6 can be shipped within 24 hours after order. If you have any demands for TH58BYG2S3HBAI6, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- TH58BYG2S3HBAI6 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
TH58BYG2S3HBAI6
| Internal Part Number | EIS-TH58BYG2S3HBAI6 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 96 | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Series | Benand™ | |
| Packaging | Tray | |
| Format - Memory | EEPROMs - Serial | |
| Memory Type | EEPROM - NAND | |
| Memory Size | 4G (512M x 8) | |
| Speed | 25ns | |
| Interface | Parallel | |
| Voltage - Supply | 1.7 V ~ 1.95 V | |
| Operating Temperature | -40°C ~ 85°C | |
| Package / Case | 67-VFBGA | |
| Supplier Device Package | 67-VFBGA (6.5x8) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | TH58BYG2S3HBAI6 | |
| Related Links | TH58BYG, TH58BYG2S3HBAI6 Datasheet, Toshiba Semiconductor & Storage Distributor | |
TH58BYG2S3HBAI6 Details Description
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