Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-VP0109N3-G | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
PCN Assembly/Origin | Additional Fabrication Site 03/Sep/2014 Fab Site Addition 14/Aug/2014 | |
PCN Packaging | Label and Packing Changes 23/Sep/2015 | |
Standard Package | 1,000 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | - | |
Packaging | Bulk | |
FET Type | MOSFET P-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 90V | |
Current - Continuous Drain (Id) @ 25°C | 250mA (Tj) | |
Rds On (Max) @ Id, Vgs | 8 Ohm @ 500mA, 10V | |
Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
Gate Charge (Qg) @ Vgs | - | |
Input Capacitance (Ciss) @ Vds | 60pF @ 25V | |
Power - Max | 1W | |
Mounting Type | Through Hole | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
Supplier Device Package | TO-92-3 | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | VP0109N3-G | |
Related Links | VP010, VP0109N3-G Datasheet, Microchip Technology Distributor |
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