EPC EPC2012C

EPC2012C picture photo
Mfg. Part Number
EPC2012C
Manufacturer
Product Category
FETs - Single
Brief Description
TRANS GAN 200V 5A BUMPED DIE
Datasheet Download
EPC2012C.pdf
Availability of EPC2012C

Available Quantity

12020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.06250
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of EPC2012C, we specialize in EPC all series electronic components. EPC2012C can be shipped within 24 hours after order. If you have any demands for EPC2012C, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
EPC2012C Order Process
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We reply within 24 hours
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Specifications of EPC2012C
Internal Part NumberEIS-EPC2012C
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Mfg Application NotesSecond Generation eGaN® FETs
Assembling eGaN® FETs
Die Attach Procedure
Die Removal Procedure
Using eGaN® FETs
Featured ProductEPC Low Voltage eGaN® FETs
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SerieseGaN®
PackagingTape & Reel (TR)
FET TypeGaNFET N-Channel, Gallium Nitride
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs100 mOhm @ 3A, 5V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) @ Vgs1.3nC @ 5V
Input Capacitance (Ciss) @ Vds140pF @ 100V
Power - Max-
Mounting TypeSurface Mount
Package / CaseDie
Supplier Device PackageDie Outline (4-Solder Bar)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)EPC2012C
Related LinksEPC2, EPC2012C Datasheet, EPC Distributor
EPC2012C Details Description
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