Fairchild Semiconductor FQPF4N60
- Mfg. Part Number
- FQPF4N60
- Manufacturer
- Fairchild Semiconductor
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 600V 2.6A TO-220F
- Datasheet Download
- FQPF4N60.pdf
Availability of FQPF4N60
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- N/A
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of FQPF4N60, we specialize in Fairchild Semiconductor all series electronic components. FQPF4N60 can be shipped within 24 hours after order. If you have any demands for FQPF4N60, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- FQPF4N60 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
FQPF4N60
| Internal Part Number | EIS-FQPF4N60 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1,000 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | QFET® | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Tc) | |
| Rds On (Max) @ Id, Vgs | 2.2 Ohm @ 1.3A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 20nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 670pF @ 25V | |
| Power - Max | 36W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-220-3 Full Pack | |
| Supplier Device Package | TO-220F | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | FQPF4N60 | |
| Related Links | FQPF, FQPF4N60 Datasheet, Fairchild Semiconductor Distributor | |
FQPF4N60 Details Description
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