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Global Power Technologies Group GP1M009A090N

GP1M009A090N picture photo
Mfg. Part Number
GP1M009A090N
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 900V 9.5A TO3PN
Datasheet Download
GP1M009A090N.pdf
Availability of GP1M009A090N

Available Quantity

6345 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 1.31400
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of GP1M009A090N, we specialize in Global Power Technologies Group all series electronic components. GP1M009A090N can be shipped within 24 hours after order. If you have any demands for GP1M009A090N, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
GP1M009A090N Order Process
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Specifications of GP1M009A090N
Internal Part NumberEIS-GP1M009A090N
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25°C9.5A (Tc)
Rds On (Max) @ Id, Vgs1.4 Ohm @ 4.75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs65nC @ 10V
Input Capacitance (Ciss) @ Vds2324pF @ 25V
Power - Max312W
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3PN
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)GP1M009A090N
Related LinksGP1M00, GP1M009A090N Datasheet, Global Power Technologies Group Distributor
GP1M009A090N Details Description
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