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Toshiba Semiconductor & Storage HN1B04FU-GR(L,F,T)

HN1B04FU-GR(L,F,T) picture photo
Mfg. Part Number
HN1B04FU-GR(L,F,T)
Manufacturer
Product Category
Transistors (BJT) - Arrays
Brief Description
TRANS NPN/PNP 50V 0.15A US6
Datasheet Download
HN1B04FU-GR(L,F,T).pdf
Availability of HN1B04FU-GR(L,F,T)

Available Quantity

5317 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.06575
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of HN1B04FU-GR(L,F,T), we specialize in Toshiba Semiconductor & Storage all series electronic components. HN1B04FU-GR(L,F,T) can be shipped within 24 hours after order. If you have any demands for HN1B04FU-GR(L,F,T), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
HN1B04FU-GR(L,F,T) Order Process
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Specifications of HN1B04FU-GR(L,F,T)
Internal Part NumberEIS-HN1B04FU-GR(L,F,T)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays
Series-
PackagingCut Tape (CT)
Transistor TypeNPN, PNP
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Power - Max200mW
Frequency - Transition150MHz
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageUS6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)HN1B04FU-GR(L,F,T)
Related LinksHN1B04FU-, HN1B04FU-GR(L,F,T) Datasheet, Toshiba Semiconductor & Storage Distributor
HN1B04FU-GR(L,F,T) Details Description
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