Infineon Technologies IPB027N10N3 G

IPB027N10N3 G picture photo
Mfg. Part Number
IPB027N10N3 G
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 120A TO263-3
Datasheet Download
IPB027N10N3 G.pdf
Availability of IPB027N10N3 G

Available Quantity

18020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 2.20512
Our Price
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EIS Components is the stocking Distributor of IPB027N10N3 G, we specialize in Infineon Technologies all series electronic components. IPB027N10N3 G can be shipped within 24 hours after order. If you have any demands for IPB027N10N3 G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IPB027N10N3 G Order Process
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Specifications of IPB027N10N3 G
Internal Part NumberEIS-IPB027N10N3 G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesOptiMOS™
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Rds On (Max) @ Id, Vgs2.7 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 275µA
Gate Charge (Qg) @ Vgs206nC @ 10V
Input Capacitance (Ciss) @ Vds14800pF @ 50V
Power - Max300W
Mounting TypeSurface Mount
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackagePG-TO263-2
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IPB027N10N3 G
Related LinksIPB027, IPB027N10N3 G Datasheet, Infineon Technologies Distributor
IPB027N10N3 G Details Description
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