IXYS Corporation IXTK32P60P
- Mfg. Part Number
- IXTK32P60P
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET P-CH 600V 32A TO-264
- Datasheet Download
- IXTK32P60P.pdf
Availability of IXTK32P60P
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 13.13520
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXTK32P60P, we specialize in IXYS Corporation all series electronic components. IXTK32P60P can be shipped within 24 hours after order. If you have any demands for IXTK32P60P, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXTK32P60P Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXTK32P60P
| Internal Part Number | EIS-IXTK32P60P | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 25 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | PolarP™ | |
| Packaging | Tube | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 600V | |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) | |
| Rds On (Max) @ Id, Vgs | 350 mOhm @ 16A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 196nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 11100pF @ 25V | |
| Power - Max | 890W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-264-3, TO-264AA | |
| Supplier Device Package | TO-264 (IXTK) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXTK32P60P | |
| Related Links | IXTK3, IXTK32P60P Datasheet, IXYS Corporation Distributor | |
IXTK32P60P Details Description
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