IXYS Corporation IXFN150N15
- Mfg. Part Number
- IXFN150N15
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 150V 150A SOT-227
- Datasheet Download
- IXFN150N15.pdf
Availability of IXFN150N15
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- N/A
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXFN150N15, we specialize in IXYS Corporation all series electronic components. IXFN150N15 can be shipped within 24 hours after order. If you have any demands for IXFN150N15, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXFN150N15 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXFN150N15
| Internal Part Number | EIS-IXFN150N15 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 10 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | HiPerFET™ | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 150V | |
| Current - Continuous Drain (Id) @ 25°C | 150A | |
| Rds On (Max) @ Id, Vgs | 12.5 mOhm @ 75A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 8mA | |
| Gate Charge (Qg) @ Vgs | 360nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 9100pF @ 25V | |
| Power - Max | 600W | |
| Mounting Type | Chassis Mount | |
| Package / Case | SOT-227-4, miniBLOC | |
| Supplier Device Package | SOT-227B | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXFN150N15 | |
| Related Links | IXFN1, IXFN150N15 Datasheet, IXYS Corporation Distributor | |
IXFN150N15 Details Description
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